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Microstructure related photoluminescence in a-CNx films deposited by reactive rf magnetron sputtering
Authors:M Lejeune  C Barthou  H-J von Bardeleben
Institution:a Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, Faculté St. Leu, 33 rue St. Leu, 80039 Amiens, France
b Laboratoire d'Optique des Solides, Université Paris VI, 4 place Jussieu, 75252 Paris Cedex 05, France
c Groupe de Physique des Solides, Université Paris VI, 2 place Jussieu, 75252 Paris Cedex 05, France
Abstract:We investigated the photoluminescence (PL) properties of carbon nitride films (CNx) deposited by rf magnetron sputtering and compared them to their microstructure depending on the target self-bias. While many of the data are compatible with ‘a-C:H like’ PL properties the observed variation of the PL efficiency η with respect to the target bias cannot be easily explained by the standard models. It is suggested that the observed variation of η is rather dominated by a change in microstructure which depends on the bombardment intensity during growth than by the concentration of non-radiative centres.
Keywords:61  43  Dq  71  55  Jv  78  55  &minus  m
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