Ⅲ-Ⅴ族化合物半导体中的深能级杂质缺陷

本文综述了近十多年以来对Ⅲ-Ⅴ族化合物半导体中深能级杂质缺陷的研究工作。讨论了深能级杂质缺陷对Ⅲ-Ⅴ族化合物材料与器件的性能的重要影响。介绍了结谱法、光致发光与电子自旋共振等几种研究深中心的方法在研究Ⅲ-Ⅴ族化合物时的某些特点。评述了对砷化镓、磷化镓和磷化铟及某些Ⅲ-Ⅴ族混晶中的一些深中心所取得的研究成果。

THE DEEP IMPURITIES AND DEFECTS IN Ⅲ-V COMPOUND SEMICONDUCTORS

Research works done on deep impurities and defects in Ⅲ-Ⅴ compound semiconductors during the last decade is reviewed.The important influences of deep impurities and defects on the Ⅲ-Ⅴ compound materials and devices have been discussed. Some specialities in the junction spectroscopy, photolumine-scence, ESR and other studying methods on deep centers have been introduced as these methods are used to study Ⅲ-Ⅴ compound semiconductors.Some research results on deep centers in GaAs, GaP, InP and some Ⅲ-Ⅴ mixed crystals have been reviewed at last.