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退火氛围对掺杂ZnO薄膜磁性的影响
引用本文:李志文,岂云开,顾建军,孙会元.退火氛围对掺杂ZnO薄膜磁性的影响[J].物理学报,2012,61(13):137501-137501.
作者姓名:李志文  岂云开  顾建军  孙会元
作者单位:1. 河北民族师范学院物理系,承德067000 河北师范大学物理科学与信息工程学院,石家庄050016
2. 河北省新型薄膜材料重点实验室,石家庄050016 河北师范大学物理科学与信息工程学院,石家庄050016
基金项目:河北省自然科学基金 (批准号: A2011101, A2012101001, A2009000254), 河北民族师范学院科研基金(批准号: 201105) 和 河北省高等学校科学研究项目(批准号: Z2011101)资助的课题.
摘    要:采用直流磁控反应共溅法制备了非磁性元素Al和磁性元素Co掺杂的ZnO薄膜, 样品原位真空退火后再空气退火处理. 利用X射线衍射仪(XRD) 和物理性能测量仪(PPMS) 对薄膜的结构和磁性进行了表征. XRD和PPMS结果表明, 不同的退火氛围对掺杂薄膜的结构和磁性有着很大的影响. 真空退火的Al掺杂ZnO薄膜没有观察到铁磁性, 而空气退火的样品却显示出明显的室温铁磁性, 铁磁性的来源与空气退火后导致Al和ZnO基体间电荷转移增强有关. 而对于Co掺杂ZnO薄膜, 真空退火后再空气退火, 室温铁磁性明显减弱. 其磁性变化与Co离子和ZnO基体间电荷转移导致磁性增强和间隙Co原子被氧化导致磁性减弱有关.

关 键 词:稀磁半导体  铁磁性  退火氛围
收稿时间:2011-10-31

Influence of annealing ambience on the magnetic properties of doped ZnO films
Li Zhi-Wen,Qi Yun-Kai,Gu Jian-Jun,Sun Hui-Yuan.Influence of annealing ambience on the magnetic properties of doped ZnO films[J].Acta Physica Sinica,2012,61(13):137501-137501.
Authors:Li Zhi-Wen  Qi Yun-Kai  Gu Jian-Jun  Sun Hui-Yuan
Institution:1. Department of Physics, Hebei Normal University for Nationalities, Chengde 067000, China;2. College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050016, China;3. Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050016, China
Abstract:The non-magnetic element Al and magnetic element Co doped ZnO films are prepared by dc magnetron sputtering The films were annealed first in vacuum and then in air. The crystal structures are analyzed by x-ray diffraction (XRD) and magnetic properties are measured by Physical Properties Measurement System (PPMS). The results show that annealing ambience has a great influence on structure and magnetic property of sample Al doped ZnO films annealed in vacuum show no room temperature ferromagnetism, but the ones annealed in air show room temperature ferromagnetism. The room temperature ferromagnetism may be associated with enhanced charge transfer between Al and ZnO films annealed in air. And for Co doped ZnO films annealed in air annealed, the ferromagnetism is weakened. The change of magnetism may be related to the competition between enhanced magnetism resulting from charge transfer between Al and ZnO and reduced magnetism resulting from interstitial Co atoms oxygenated.
Keywords:diluted magnetic semiconductors  ferromagnetism  annealing ambience
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