| Abstract: | Scanning electron microscopy (SEM) has frequently been used to study semiconductor materials. It offers the possibility of obtaining reliable qualitative and quantitative information on relevant local material parameters. The temperature rise due to electron‐beam bombardment can influence some semiconductor parameters, which then will influence the SEM information. In this work we propose a model calculation based on the Monte Carlo (MC) method to calculate the temperature rise due to electron‐beam heating. The results show that the temperature rise increases with increasing numbers of electrons (electron‐beam current), and the inverse behavior is observed with respect to the electron energy (electron‐beam voltage). The decrease in temperature rise with depth is also obtained. Copyright © 2006 John Wiley & Sons, Ltd. |
