| 常压CVD法合成铌掺杂少层MoS2 |
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| 引用本文： | 申赫,王岩岩.常压CVD法合成铌掺杂少层MoS2[J].发光学报,2018,39(12):1654-1658. |
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| 作者姓名： | 申赫 王岩岩 |
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| 作者单位： | 1. 吉林师范大学 功能材料物理与化学教育部重点实验室, 吉林 长春 130103;
2. 吉林师范大学 物理学院, 吉林 四平 136000;
3. 吉林师范大学 环境友好材料制备与应用教育部重点实验室, 吉林 长春 130103;
4. 吉林师范大学 化学学院, 吉林 四平 136000 |
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| 基金项目： | 国家自然科学基金（61705078，61704065，11374296）；吉林省科技厅发展计划（20180520179JH，20150414003GH）资助项目 |
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| 摘 要： | 利用粉体NbCl5作为Nb掺杂源，采用常压CVD方法合成了大尺寸Nb掺杂的少层MoS2薄膜。通过扫描电子显微镜和原子力显微镜观察获得了该薄膜样品的形貌和厚度信息。拉曼光谱和X射线光电子谱测试证实了Nb被掺入到了MoS2薄膜中，Nb掺杂的MoS2合金薄膜已经形成。最后，对Nb掺杂的少层MoS2薄膜的电学性质进行了测试。
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| 关 键 词： | 常压CVD MoS2薄膜 Nb掺杂 |
| 收稿时间： | 2018-08-06 |
Synthesis of Nb Doped Few-layered MoS2 by Ambient Pressure CVD |
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| SHEN He,WANG Yan-yan.Synthesis of Nb Doped Few-layered MoS2 by Ambient Pressure CVD[J].Chinese Journal of Luminescence,2018,39(12):1654-1658. |
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| Authors: | SHEN He WANG Yan-yan |
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| Institution: | 1. Key Laboratory of Functional Materials Physics and Chemistry, Ministry of Education, Jilin Normal University, Changchun 130103, China;
2. College of Physics, Jilin Normal University, Siping 136000, China;
3. Key Laboratory of Preparation and Application of Environmental Friendly Materials, Ministry of Education, Jilin Normal University, Changchun 130103, China;
4. College of Chemistry, Jilin Normal University, Siping 136000, China |
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| Abstract: | Base on the ambient pressure CVD method, the large-scale Nb doped few-layered MoS2 films were synthesized by using NbCl5 powders as the Nb dopant source. The morphology and the thickness of these films were confirmed by scanning electron microscope and atomic force microscope. Raman spectroscopy and X-ray photoelectron spectrometer measurements confirm that Nb has been doped into the MoS2 film and the Nb doped MoS2 alloy has been formed. The conductivity of the Nb doped few-layered MoS2 has also been collected. |
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| Keywords: | ambient pressure CVD MoS2 film Nb doped |
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