| Abstract: | Adsorption of triethylgemane (TEG) on the Si(100) surface at 100 K has been studied using a variety of surface‐sensitive spectroscopies. Thermally and electronically desorbed species were analyzed using temperature‐programmed desorption (TPD) and electron‐stimulated desorption (ESD) techniques. Electronically desorbed ions (H+) were analyzed using a time‐of‐flight technique (TOF) and time evolution studies were conducted on desorbing neutral species. Direct analysis of surface species were carried out using X‐ray photoelectron spectroscopy (XPS) and high‐resolution electron energy loss (HREELS) spectroscopy. Evidence is offered for (1) an electron‐induced channel for direct ethylene desorption via a β‐hydride elimination process; (2) an electron‐stimulated transfer of ethyl ligands from a Ge to a Si site; and (3) both thermal‐ and electron‐stimulated desorption of methyl groups. Copyright © 2006 John Wiley & Sons, Ltd. |
