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AgAsS2 amorphous chalcogenide films prepared by pulsed laser deposition |
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| Authors: | T. Wagner M. Krbal P. Nemec M. Frumar Th. Wagner Mil. Vlcek V. Perina A. Mackova V. Hnatovitz S.O. Kasap |
| Affiliation: | (1) Department of General and Inorganic Chemistry, University of Pardubice, 53210 Pardubice, Czech Republic;(2) L.O.T. – Oriel GmbH&Co. KG, Im Tiefen See 58, 64293 Darmstadt, Germany;(3) Joint Laboratory of Solid State Chemistry , Czech Academy of Sciences and University of Pardubice, Studentská 84, 53210 Pardubice, Czech Republic;(4) Institute of Nuclear Physics, Academy of Sciences CR, 25068 Rez near Prague, Czech Republic;(5) Department of Electrical Engineering, University of Saskatchewan, Campus Dr. 57, Saskatoon, S7N 5A9, Canada |
| Abstract: | A pulsed laser deposition technique has been applied to prepare amorphous ternary Ag–As–S films without an annealing process after the deposition. The films were prepared from AgAsS2 bulk glass using a KrF excimer laser. Energy-dispersive X-ray analysis and Rutherford backscattering were used to obtain the composition of the studied films. VASE ellipsometry has been used to determine optical properties and homogeneity of the index of refraction. Comparison of two models is presented. PACS 78.66.Jg; 81.15.Fg; 81.40.Wx |
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