| 硅衬底MgB_2-B-MgB_2超导SNS约瑟夫森结的制备与特性 |
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| 引用本文： | 柯一青,周迪帆,刘珏,曾敏,朱红妹,张义邴. 硅衬底MgB_2-B-MgB_2超导SNS约瑟夫森结的制备与特性[J]. 低温物理学报, 2009, 31(2) |
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| 作者姓名： | 柯一青 周迪帆 刘珏 曾敏 朱红妹 张义邴 |
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| 作者单位： | 上海大学理学院物理系上海,200444 |
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| 摘 要： | 利用两步原位电子束蒸发技术,在Si(111)衬底上制备了MgB2-B-MgB2超导SNS约瑟夫森夹心结.夹心硼(B)层厚度从10nm到80nm范围内MgB2-B-MgB2/Si(111)薄膜表现出明显的SNS约瑟夫森结特性,而在5nm和100nm处薄膜分别是整体超导和正常金属特性.在同一温度下,随着硼层厚度的增加,临界结电流减小,对同一厚度下,临界结电流随着温度的增加而减小.同时,实验指出,夹心硼SNS超导MgB2约瑟夫森结的电流-电压(I-V)曲线具有回滞现象,符合SM模型.
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| 关 键 词： | 约瑟夫森结 超导薄膜 电子束蒸发 Si衬底 |
PREPARATION AND CHARACTERISTICS OF MgB_2-B-MgB_2 JOSEPHSON JUNCTION ON Si(111) SUBSTRATE |
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| KE Yi-qing ZHOU Di-fan LIU Jue ZEN min ZHU Hong-mei ZHANG Yi-bing. PREPARATION AND CHARACTERISTICS OF MgB_2-B-MgB_2 JOSEPHSON JUNCTION ON Si(111) SUBSTRATE[J]. Chinese Journal of Low Temperature Physics, 2009, 31(2) |
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| Authors: | KE Yi-qing ZHOU Di-fan LIU Jue ZEN min ZHU Hong-mei ZHANG Yi-bing |
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| Affiliation: | KE Yi-qing ZHOU Di-fan LIU Jue ZEN min ZHU Hong-mei ZHANG Yi-bing Department of Physics,College of Science,Shanghai University,Shanghai 200444 |
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| Abstract: | Sandwich-type MgB2-B-MgB2 Josephson junction has been fabricated by e-beam evaporation and two-step in situ annealing procedures on Si(111) substrate. The MgB2-B-MgB2/Si(111) thin films show evident DC Josephson effect when the thickness of barrier layer (B layer) is from 10 nm to 80 nm. The films with 5nm and 100nm barrier layers show entire superconductivity and normal metallicity respectively. The critical current IC will decrease gradually with the thickness of B layer increasing at the same temperature... |
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| Keywords: | MgB2 |
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