High-frequency hopping conductivity and permittivity in compensated semiconductors |
| |
Authors: | V. D. Kagan |
| |
Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
| |
Abstract: | In semiconductors, high-frequency conductivity is caused by polarization reversal of the collective states of a pair of impurity atoms under the action of the random electric fields of all the impurities. A Coulomb correlation which appreciably increases the conductivity is established as a result of the statistical distribution of the particles over four levels of the diatomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|