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Structure–composition sensitivity in “Metallic” Zintl phases: A study of Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1)
Authors:Tae-Soo You, Jing-Tai Zhao, Rainer P  ttgen, Walter Schnelle, Ulrich Burkhardt, Yuri Grin,Gordon J. Miller
Affiliation:aDepartment of Chemistry, Iowa State University, Ames, IA 50011, USA;bShanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China;cInstitut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30, 48149 Münster, Germany;dMax-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187 Dresden, Germany
Abstract:Two isoelectronic series, Eu(Ga1−xTtx)2 (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga1−xSix)2, crystal structures vary from the KHg2-type to the AlB2-type, and, finally, the ThSi2-type structure as x increases. The hexagonal AlB2-type structure is identified for compositions 0.18(2)≤x<0.70(2) with Ga and Si atoms statistically distributed in the polyanionic 63 nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga–Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 63 nets for the Si-richest example of the AlB2-type Eu(Ga1−xSix)2, the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga1−xGex)2, six different structural types were observed as x varies. In addition to EuGa2 (KHg2-type; space group Imma) and EuGe2 (own structure type, space group Pm1), the ternary phases studied show four different structures: the AlB2-type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe2, for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga0.45(2)Ge0.55(2))2 containing two YPtAs-type motifs of EuGaGe plus one EuGe2 motif; and (2) Eu(Ga0.40(2)Ge0.60(2))2 containing one YPtAs-type motif alternating with a split site at View the MathML source and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga1−xGex)2 compounds display Curie–Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f7 electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first principles electronic structure calculations, rationalize the observed homogeneity ranges of the AlB2-type phases in both systems and the structural variations as a function of Tt content.
Keywords:Polar intermetallics   Electronic structure   Crystallography
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