基底温度对电子束蒸发制备氧化铝薄膜的影响

为了考察基底温度对氧化铝薄膜折射率以及沉积厚度的影响情况，在不同基底温度环境下，通过离子辅助电子束蒸发方式，在玻璃基底上制备了同一Tooling因子条件下所监测到相同厚度的Al2O3薄膜，利用分光光度计测量光谱透过率，依据光学薄膜相关理论，计算了基底温度在25℃～300℃范围内获得的膜层实际物理厚度为275.611 nm～348.447 nm，以及膜层折射率的变化。通过对实验结果的数值计算和曲线模拟，给出了基底温度对于薄膜的折射率和实际厚度的影响情况。

Effect of substrate temperature on alumina thin films prepared by electron beam evaporation

To study the influence of substrate temperature on the refractive index of alumina thin film and the film thickness, we accomplished Al2O3 thin films by ion assisted electron beam evaporation method under different substrate temperatures and the same Tooling factors. Based on the related theory of optical film, using the spectrophotometer to measure the spectral transmittance, we calculated the actual film thickness which were 275.611 nm~348.447 nm and the refractive index under 25℃~300℃. With the curves by numerical calculation and the experimental results by simulation, the effect of substrate temperature on refractive index of thin films and deposition efficiency was given.