Structural disorder model for amorphous semiconductor; Absorption edge in hydrogenated a-Si |
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| Authors: | BA Vaid KC Sharma DR Sharma |
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| Institution: | Department of Physics, Himachal Pradesh University, Summer Hill, Shimla-171 005, India |
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| Abstract: | The effect of structural disorder on the width of the Urbach edge E0, the energy band gap EG and dEG/dT in hydrogenated a-Si has been analysed in terms of a simple structural disorder model and has been found to be in satisfactory agreement with the experimental data. |
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