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Discontinuous behaviour in the optical recording properties of he implanted te thin films |
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| Authors: | J. Beauvais P. Galarneau R. A. Lessard E. J. Knystautas |
| Affiliation: | (1) Centre d'Optique Photonique et Laser, Départment de Physique, Université Laval, G1K 7P4 Ste-Foy, Québec, Canada;(2) Institut National d'Optique, 369 rue Franquet, Ste-Foy, Québec, Canada |
| Abstract: | Helium implantations were realized in polycrystalline tellurium thin films. Discontinuities in the dependence of the relative threshold writing energy with both implanted ion dose and ion beam energy are observed. Correlations between the optical recording properties and the optical loss of the thin films suggest that the intrinsic threshold writting energy of the films is influenced by the implantation process. |
| Keywords: | 42.30.Nt 78.65.Jd 61.70.Tm |
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