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Selective spin injection controlled by electrical way in ferromagnet/quantum dot/semiconductor system |
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| Authors: | Zhen-Gang Zhu |
| Affiliation: | a Center for Advanced Study, Tsinghua University, Beijing 100084, China b Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Nanotechnikum-Weinberg, Heinrich-Damerow-St. 4, 06120 Halle, Germany c Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, Singapore |
| Abstract: | Selective and large polarization of current injected into semiconductor (SC) is predicted in ferromagnet (FM)/quantum dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is also revealed below Kondo temperature. It is found that Kondo resonances for up spin state are suppressed with increasing of the polarization P of the FM lead. While the down one is enhanced. The Kondo peak for up spin is disappear at P=1. |
| Keywords: | 72.25.-b 73.40.-c 73.21.La 72.15.Qm |
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