High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives |
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| Authors: | Naraso Nishida Jun-ichi Kumaki Daisuke Tokito Shizuo Yamashita Yoshiro |
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| Affiliation: | Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan. |
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| Abstract: | ![]()
The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The pi-stacking structures were observed in the single crystals of tetrahalogeno-TTFs. |
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