Light‐induced degradation in copper‐contaminated gallium‐doped silicon |
| |
| Authors: | Jeanette Lindroos Marko Yli‐Koski Antti Haarahiltunen Martin C. Schubert Hele Savin |
| |
| Affiliation: | 1. Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland;2. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstra?e 2, 79110 Freiburg, Germany |
| |
| Abstract: | To date, gallium‐doped Czochralski (Cz) silicon has constituted a solar cell bulk material free of light‐induced degradation. However, we measure light‐induced degradation in gallium‐doped Cz silicon in the presence of copper impurities. The measured degradation depends on the copper concentration and the material resistivity. Gallium‐doped Cz silicon is found to be less sensitive to copper impurities than boron‐doped Cz silicon, emphasizing the role of boron in the formation of copper‐related light‐induced degradation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | degradation lifetime silicon gallium copper |
|
|
