The growth of HgI2 crystals

The paper presents a system for αHgI₂ crystal growth by the temperature oscillation method. The system has a capability of crystal growing at an excess I₂ or Hg vapour pressure. Optimum conditions for producing crystals up to 2 cm³ by volume have been established. The crystals grown at an excess I₂ vapour pressure have higher resistivity and higher drift electron and hole mobilities — μ_e = 120 cm² V⁻¹ s⁻¹ and μ_h = 6 cm² V⁻¹ s⁻¹, respectively.