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Study of Wide-Gap Semiconductors Using Electron-Beam Induced Current Method
Authors:Yakimov  E B
Institution:1.Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia
;2.National University of Science and Technology MISiS, 119049, Moscow, Russia
;
Abstract:Crystallography Reports - The studies of wide-gap semiconductor materials using electron-beam induced current (EBIC) method are reviewed. The main methods for measuring the diffusion length of...
Keywords:
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