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Extended Defects in O+-Implanted Si Layers and Their Luminescence |
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| Authors: | Vdovin V. I. Fedina L. I. Gutakovskii A. K. Kalyadin A. E. Shek E. I. Shtel’makh K. F. Sobolev N. A. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia ; |
| Abstract: | Crystallography Reports - The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and... |
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