The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots |
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| Authors: | E S Moskalenko M Larsson K F Karlsson P O Holtz B Monemar W V Schoenfeld P M Petroff |
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| Institution: | 1.Department of Physics and Measurement Technology,Linkoping University,Link?ping,Sweden;2.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;3.Materials Department,University of California,Santa Barbara,USA |
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| Abstract: | We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral
external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external
and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially
faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed
effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity
measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.
The text was submitted by the authors in English. |
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