Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots |
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Authors: | A A Bloshkin A I Yakimov A F Zinovieva V A Zinoviev A V Dvurechenskii |
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Institution: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Novosibirsk State University,Novosibirsk,Russia;3.Tomsk State University,Tomsk,Russia |
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Abstract: | The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge—Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots. |
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