Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method

The crystallization of In_xGa_1−xSb for $x=0.06$ by the AHP-method (Axial Heat flux, close to the Phase interface) is considered. Heavy indium is rejected during crystal growth close to the interface. Indium significantly decreases the crystallization temperature, and has an influence on the melt convection. The AHP-heater serves as a partition; due to this partition a small well-mixed liquid zone with high In concentration exists and causes a stable crystal growth with high composition after the crucible is moved down. The grown crystal is very homogeneous. Numerical modelling has also been performed, using finite difference schemes. To cite this article: M. Marchenko, C. R. Mecanique 335 (2007).