Transport Properties of TlInSe2 Single Crystals

Single crystals of TlInSe₂ were prepared by a special modified Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility, and the carrier concentration was investigated in the temperature range 190–625 K. The energy gap of conduction was calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range. Beside this, the thermoelectric power was measured in a temperature range extending from 190 up to 485 K.