Abstract: | The HgI2 single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI2 single crystals have been investigated in detail. It is found by means of X-ray diffraction that the crystals grown with the c-axis parallel or perpendicular to the pedestal plane have both the prism faces {110}. |