Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential |
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| Authors: | C A Duque M E Mora-Ramos E Kasapoglu H Sari I Sökmen |
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| Institution: | 1.Instituto de Física,Universidad de Antioquia,Medellín,Colombia;2.Facultad de Ciencias,Universidad Autónoma del Estado de Morelos,Cuernavaca, Morelos,Mexico;3.Physics Department,Cumhuriyet University,Sivas,Turkey;4.Physics Department,Dokuz Eylül University,?zmir,Turkey |
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| Abstract: | In this work are studied the intense laser effects on the impurity states in GaAs-Ga1−
x
Al
x
As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction
of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective
mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying
the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions
of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense
laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function
of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied
magnetic field, according to the intensity of the laser field radiation. |
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