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Performance improvement of GaN-based light-emitting diode with a p-InAIGaN hole injection layer |
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| Institution: | [1]Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; [2]Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 51063 l, China |
| Abstract: | InGaN light-emitting diodes （LEDs）, p-InA1GaN hole injection layer （HIL）, numerical simulation |
| Keywords: | InGaN light-emitting diodes （LEDs） p-InA1GaN hole injection layer （HIL） numerical simulation |
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