Analysis of flatband voltage shift of metallhigh-k/Si02/Si stack based on energy band alignment of entire gate stack |
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| Institution: | [1]Department of Physics and Electronic Science, Weifang University, Weithng 261061, China; [2]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | metal gate, high-k dielectric, band alignment, Vfb shift |
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| Keywords: | metal gate high-k dielectric band alignment Vfb shift |
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