Luminescence properties of InAs quantum dots formed by a modified self-assembled method |
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| Authors: | Hee Yeon Kim Mee-Yi Ryu Jin Soo Kim |
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| Institution: | 1. Department of Physics, Kangwon National University, Chuncheon 200-701, South Korea;2. Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, South Korea |
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| Abstract: | The luminescence properties of self-assembled InAs quantum dots (QDs) on GaAs (1 0 0) substrates grown by molecular beam epitaxy have been investigated using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL). InAs QDs were grown using an In-interruption growth technique, in which the indium flux was periodically interrupted. InAs QDs grown using In-interruption showed reduced PL linewidth, redshifted PL emission energy, increased energy level spacing between the ground state and the first excited state, and reduced decay time, indicating an improvement in the size distribution and size/shape of QDs. |
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