Preparation of Cu2ZnSnS4 single crystals from Sn solutions |
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Authors: | Akira Nagaoka Kenji Yoshino Hiroki Taniguchi Tomoyasu Taniyama Hideto Miyake |
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Affiliation: | 1. Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan;2. Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;3. Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan |
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Abstract: | We investigated the phase diagrams of the Cu2ZnSnS4 (CZTS)–Sn pseudobinary system in order to obtain knowledge useful for the growth of high-quality CZTS single crystals using a solution-based method. For Sn solutions saturated with less than ~60 mol% CZTS, the solutes are separated into two phases (CZTS phase+SnSx phase+liquid phase). On the other hand, for solutions with more than 60 mol% CZTS, the solutes are single phase (CZTS phase+liquid phase). The CZTS single crystals were obtained from a 70 mol% CZTS solution (liquid temperature 850 °C) at 900 °C. The powder X-ray diffraction (XRD) pattern of the CZTS single crystal shows preferred orientations of (112), (220) and (312) planes, confirming the Kesterite structure of CZTS. The Raman spectrum shows three peaks at 287, 338, 371 cm?1, which corresponded to CZTS peaks. The composition of the CZTS single crystal along the growth direction is found to be slightly Cu-poor, Zn-rich and S-rich. Therefore, it is assumed that the Cu vacancy is the dominant p-type conduction mechanism. |
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