Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures |
| |
Authors: | G Polupan LG Vega-Macotela F Sanchez Silva |
| |
Institution: | ESIME—Instituto Politécnico Nacional, México D.F. 07738, México |
| |
Abstract: | The paper presents the photoluminescence (PL) study of InAs quantum dots (QDs) embedded in the asymmetric GaAs/InxGa1?xAs/In0.15Ga0.85As/GaAs quantum wells (QWs) with the different compositions of capping InxGa1?xAs layers. The composition of the buffer In0.15Ga0.85As layer was the same in all studied QD structures, but the In content (parameter x) in the capping InxGa1?xAs layers varied within the range 0.10–0.25. The In concentration (x) increase in the InxGa1?xAs capping layers is accompanied by the variation non-monotonously of InAs QD emission: PL intensity and peak positions. To understand the reasons of PL variation, the PL temperature dependences and X ray diffraction (XRD) have been investigated. It was revealed that the level of elastic deformation (elastic strain) and the Ga/In interdiffusion at the InxGa1?xAs/InAs QD interface are characterized by the non-monotonous dependences versus parameter x. The physical reasons for the non-monotonous variation of the elastic strains and PL parameters in studied QD structures have been discussed. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |