Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction |
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| Authors: | Songzhan Li Guojia Fang Hao Long Haoning Wang Huihui Huang Xiaoming Mo Xingzhong Zhao |
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| Institution: | 1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, PR China;2. School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073, PR China |
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| Abstract: | Ultraviolet (UV) electroluminescence (EL) of n-ZnO:Al (AZO)/i-layer/n-GaN heterojunctions with different intrinsic layers has been obtained. Rectifying behavior and EL spectra of the heterojunctions are investigated at room temperature. Under positive voltage, a dominant UV emission peak around ～370 nm is observed for both AZO/i-ZnO/n-GaN and AZO/i-MgO/n-GaN heterojunctions. Nevertheless, the UV emission peak intensity of AZO/i-MgO/n-GaN heterojunction is much stronger than that of AZO/i-ZnO/n-GaN heterojunction at the same voltage. The threshold voltage of AZO/i-MgO/n-GaN heterostructured device is as low as 2.3 V. The difference of EL spectra and the emission mechanism in these devices are discussed. |
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