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Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses |
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| Authors: | K.W. Liu S.J. Young S.J. Chang T.H. Hsueh Y.Z. Chen K.J. Chen H. Hung S.M. Wang Y.L. Wu |
| Affiliation: | 1. Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan;2. Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan;3. Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;4. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan |
| Abstract: | This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism. |
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