Untersuchung gestörter Oberflächenschichten an Siliziumeinkristallen

It has been proved that by densitometric measurements of reflections of Kikuchi photograms a numeric value can be found for the quality of polished surfaces of Si single crystals. This value is given by the proportion ΔS₁/ΔS₀, characterizing the relation of the initial state of surface and the state of deeper layers, not being affected by mechanical working. This method enables to estimate the quality of crystal surfaces.