Liquidphasen-Epitaxie von Si-dotiertem AlxGa1−xAs

The liquidus and solidus isotherms of the quaternary phase diagram Ga—Al—As–Si have been estimated at 850 °C and N_Si = 0.04 and 0.1. Epitaxial layers were grown and the influence of silicon on the growth rate was investigated. Hall-effect measurements give informations on the dependence of the carrier concentration on the silicon content in the melt. The donor ionization energies vary from 32 to 69 meV and are diminished proportional to N.