|
|||||
|
|
Polariton emission in GaN microcavities |
|
| Authors: | M. Gurioli M. Zamfirescu F. Stokker-Cheregi A. Vinattieri I.R. Sellers F. Semond M. Leroux J. Massies |
| Affiliation: | aLENS, Dipartimento di Fisica, Università di Firenze, 50019 Sesto Fiorentino, Italy;bCRHEA-CNRS, Rue Bernard Gregory, Valbonne 06560, France;cNational Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, 077125, Bucharest, Romania |
| Abstract: | We present a detailed experimental study aimed at demonstrating the polariton nature of the photoluminescence emission in a bulk GaN microcavity grown on (111) silicon. The comparison of the photoluminescence with coincident reflectivity measurements at different temperatures shows an anticrossing behaviour with a Rabi splitting of the order of 35 meV up to room temperature. Relevant confirmations of the mixing between excitons and photons are found in the analysis of the spectral linewidth and of the time resolved kinetics. |
| Keywords: | Polariton Strong coupling Microcavities |
| 本文献已被 ScienceDirect 等数据库收录！ | |