Study on the p-type QWIP-LED device |
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Authors: | Zhen Honglou Xiong Dayuan Zhou Xuchang Li Ning Shao Jun and Lu Wei |
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Institution: | (1) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China |
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Abstract: | A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated
and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared
photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength
infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process
in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the
theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for
the new infrared focal plane array technology. |
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Keywords: | p-type QWIP-LED upconversion device photo-response spectrum light-emitting spectrum frequency response |
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