Donor-acceptor recombination in type-II GaAs/AlAs superlattices |
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| Authors: | K. S. Zhuravlev A. M. Gilinskii T. S. Shamirzaev V. V. Preobrazhenskii B. R. Semyagin M. A. Putyato S. S. Chipkin |
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| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia;(2) Siberian State Geodetic Academy, 630108 Novosibirsk, Russia |
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| Abstract: | ![]()
A study is reported of steady-and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)7(AlAs)9 superlattices grown by MBE simultaneously on (311)A-and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined. Fiz. Tverd. Tela (St. Petersburg) 40, 1734–1739 (September 1998) |
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