| (单晶硅/电解液)界面对多孔硅形成初期阶段的影响 |
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| 引用本文： | 李清山,李鹏,马玉蓉,潘必才,夏上达,方容川.(单晶硅/电解液)界面对多孔硅形成初期阶段的影响[J].物理学报,1996,45(2):244-248. |
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| 作者姓名： | 李清山 李鹏 马玉蓉 潘必才 夏上达 方容川 |
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| 作者单位： | 中国科学技术大学物理系,合肥230026 |
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| 基金项目： | 国家自然科学基金资助的课题 |
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| 摘 要： | 测量了在多孔硅形成初期阶段的电流I-电压V曲线,计算了硅表面原子吸附不同元素时电荷的转移量.指出在(单晶硅/电解液)界面处存在一电偶层,它影响着多孔硅材料的形成和性质.讨论了制备中氢氟酸(HF)浓度、电流密度和光照等因素对材料形成的影响.
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| 关 键 词： | 多孔硅 界面 单晶硅／电解液 |
| 收稿时间： | 1994-11-02 |
EFFECT OF c-Si/ELECTROLYTE INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION |
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| LI QING-SHAN,LI PENG,MA YU-RONG,PAN BI-CAI,XIA SHANG-DA and FANG RONG-CHUAN.EFFECT OF c-Si/ELECTROLYTE INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION[J].Acta Physica Sinica,1996,45(2):244-248. |
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| Authors: | LI QING-SHAN LI PENG MA YU-RONG PAN BI-CAI XIA SHANG-DA and FANG RONG-CHUAN |
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| Abstract: | The I-V curves of the initial stage of porous silicon formation have been measured, and the amount of charge transfer for silicon atoms adsorbed different elements has been calculated. It was pointed out that there would exist a dipole layer at c-Si/electrolyte interface, which affected the formation and properties of porous silicon. The effects of HF concentration, current density and light illumination on material formation were also discussed. |
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