| 强磁场中晶体生长研究 |
| |
| 引用本文： | 康俊勇,户泽慎一郎.强磁场中晶体生长研究[J].物理学报,1996,45(2):324-329. |
| |
| 作者姓名： | 康俊勇 户泽慎一郎 |
| |
| 作者单位： | (1)东北大学金属材料研究所,仙台980,日本; (2)厦门大学物理系,厦门361005 |
| |
| 基金项目： | 国家自然科学基金;福建省自然科学基金资助的课题 |
| |
| 摘 要： | 设计和制造了一套垂直渐冷设备以研究强磁场中的晶体生长,在强磁场和无磁场下,测量了掺碲InSb熔体及其上方的温度分布;生长了低GaSh组分的InGaSb和掺碲InSb晶体.实验表明,8.00T的强磁场能改善InGaSb混晶的质最和提高InSb晶体中Te杂质轴向分布的均匀性.分析认为,这些结果是强磁场提高流体的稳定性和降低对流的速度所致.
关键词：
|
| 关 键 词： | 晶体生长 强磁场 铷化铟 半导体 |
| 收稿时间： | 1994-10-06 |
CRYSTAL GROWTH IN A HIGH MAGNETIC FIELD |
| |
| KANG JUN-YONG and TOZAWA SHINIRRO.CRYSTAL GROWTH IN A HIGH MAGNETIC FIELD[J].Acta Physica Sinica,1996,45(2):324-329. |
| |
| Authors: | KANG JUN-YONG and TOZAWA SHINIRRO |
| |
| Abstract: | A vertical gradient freeze apparatus was set up to investigate the crystal growth in high magnetic field. In the presence and absence of a magnetic field, temperature profiles were measured from solid-liquid interface to over Te-doped InSb melt, and InGaSb with low GaSb mole fraction and Te-doped InSb crystals were grown. The results of investigation show the high magnetic field of 8.00T can improve the quality of InGaSb crystal and the homogeneity of axial profile of Te impurity. These results are considered to be the consequence of the improvement of stability and the reduction of convective velocities of the melts in the high magnetic field. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
