Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A |
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| Authors: | Q. Gong R. N tzel P.J. van Veldhoven T.J. Eijkemans J.H. Wolter |
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| Affiliation: | eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux. |
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| Keywords: | A1. Low dimensional structures A3. Chemical beam epitaxy B2. Semiconducting III–V materials |
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