钙钛矿型Gd~2CuO~4复合氧化物薄膜的制备

采用非晶态多核配合物作为前驱体的方法在单晶硅表面成功地制备了钙钛矿型的复合金属氧化物Gd~2CuO~4薄膜，XPS研究表明所制备出的薄膜由Gd~2CuO~4复合金属氧化物组成。XRD研究表明经600℃热处理形成的复合氧化物薄膜以钙钛矿型晶相结构存在，也进一步证实了所制备出的薄膜是Gd~2CuO~4复合金属氧化物，其晶粒大小在20nm左右。俄歇电子能谱的深度剖析表明形成的薄膜组成均匀，在界面上有一定程度的扩散作用。运用AES揭示了Gd~2CuO~4薄膜的厚度与前驱体溶液中前驱体的质量分数以及添加剂的影响规律。SEM研究表明前驱体配合物的质量分数越低，形成的薄膜越薄，其表面织构越均匀。当前驱体的质量分数超过一定值后，形成的薄膜具有很多策微裂纹。添加剂聚乙二醇对形成的薄膜厚度没有明显的影响，但可以明显改善薄膜的织构，使复合氧化物在衬底上分散得更均匀，抑制微裂纹的产生。

preparation of Gd~2CuO~4 film with perovskite structure

Gd~2CuO~4 film was successfully deposited on Si wafer using an amorphous heteronuclear complex as precursor. XPS indicated the film was composed of Gd~2CuO~4 complicated oxide, and while XRD showed that the film had perovskite structure. AES depth profile revealed the film was homogenous with depth. The thickness of film increased with the concentration of precursor polynomially and the relationship could be described as follows: d=2.96 - 0.446(ω/%) + 0. 141(ω/%)^2. The mass fraction of precursor in solution had singnifluence on the texture of film. When the mass fraction of precursor in solution was lower than 22%, no micro-crackle was observed. The addition of PEG had practically no effects on the thickness of film, but it could improve the texture of the film.