Suppression of the unconventional metallic behavior by gate voltage in MWNT device |
| |
| Authors: | T Kanbara Y Iwasa K Tsukagoshi Y Aoyagi |
| |
| Institution: | aInstitute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan;bRiken, Hirosawa 2-1, Wako 351-0198, Japan;cCREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan;dPRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan;eTokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8551, Japan |
| |
| Abstract: | We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. Power-law behaviors in temperature and bias-dependent conductance, disappeared when a high gate voltage was applied, and conductance became temperature- and bias independent. This indicates a gate-induced transformation from the unconventional to the normal metallic states in MWNT. |
| |
| Keywords: | Nanotube Electronis structure of nanoscale materials Nanotube devices |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
