| 硒蒸气浓度对制备CIGS薄膜的影响 |
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| 引用本文： | 廖成,韩俊峰,江涛,谢华木,焦飞,赵夔.硒蒸气浓度对制备CIGS薄膜的影响[J].物理化学学报,2011,27(2):432-436. |
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| 作者姓名： | 廖成 韩俊峰 江涛 谢华木 焦飞 赵夔 |
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| 作者单位： | State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, P. R. China |
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| 基金项目： | 北京市自然科学基金(H030630010120)资助项目~~ |
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| 摘 要： | 采用“预制层硒化法”制备CuIn1-xGaxSe2 (CIGS)薄膜. 基于自主设计的“双层管式硒化装置”, 通过控制硒蒸气浓度优化退火工艺, 研究硒蒸气浓度对薄膜光电性能的影响. 利用俄歇电子能谱(AES)和X射线衍射分析(XRD)等手段对不同硒浓度氛围下生成的CIGS薄膜的成分和物相进行表征, 并在AM1.5、1000 W·m-2的标准光照条件下比较相应CIGS电池器件的输出性能. 实验结果表明: 饱和硒蒸气下退火得到的样品, 基底钼膜遭到严重腐蚀破坏, 失去背电极功能; 在低浓度硒气氛下退火不能有效消除CIGS薄膜的偏析和缺陷, 以致光电转换效率低; 而在无硒惰性氛围下退火的样品, 生成了物相均一化的CIGS薄膜, 由此制备的CIGS电池取得了8.5%的转换效率.
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| 关 键 词： | 双层管式硒化装置 预制层硒化法 饱和硒蒸气 退火 偏析 |
| 收稿时间： | 2010-11-03 |
| 修稿时间： | 2011-01-07 |
Effect of Se Vapor Concentration on CIGS Film Preparation |
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| LIAO Cheng,HAN Jun-Feng,JIANG Tao,XIE Hua-Mu,JIAO Fei,ZHAO Kui.Effect of Se Vapor Concentration on CIGS Film Preparation[J].Acta Physico-Chimica Sinica,2011,27(2):432-436. |
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| Authors: | LIAO Cheng HAN Jun-Feng JIANG Tao XIE Hua-Mu JIAO Fei ZHAO Kui |
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| Institution: | State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, P. R. China |
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| Abstract: | We applied the selenization of stack element layers method to the preparation of CuIn1-xGaxSe2(CIGS) films.The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility,and its effect on the photoelectric characteristics of the films was studied.Auger electron spectroscopy(AES) and X-ray diffraction(XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information,respectively.The o... |
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| Keywords: | Bi-layer tubular selenization facility Selenization of stack element layer Saturated selenium vapor Annealing Segregation |
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