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| 离子注入制备量子光电材料的研究 | |
| 引用本文： | 谢二庆 王志光. 离子注入制备量子光电材料的研究[J]. 原子核物理评论, 1998, 15(3): 166-169. DOI: 10.11804/NuclPhysRev.15.03.166 |
| 作者姓名： | 谢二庆 王志光 |
| 作者单位： | 1中国科学院近代物理研究所;2 兰州大学物理系 |
| 摘 要： | 对由量子限域效应引起的硅纳米晶粒的强烈光致发光现象、离子注入技术制备量子光电材料及其在光电子器件应用领域的优势和前景作了评述和探讨．The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed. |
| 关 键 词： | 离子注入 硅纳米晶粒 量子点材料 |
| 收稿时间： | 1900-01-01 |
Study of Quantum Optoelectronic Material Prepared by Ion Implantation |
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| Affiliation: | 1 Institute of Modern Physics; the Chinese Academy of Sciences; Lanzhou 730000 2 Department of Physics; Lanzhou University; Lanzhou 730000 |
| Abstract: | The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed. |
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