A gas-phase electron diffraction study of the molecular structure of tetravinylsilane

The molecular structure of tetravinylsilane has been studied by gas-phase electron diffraction. The radial distribution curve suggests the absence of conformers having vinyl double bonds staggered with respect to the SiC₄ skeleton. Of the eclipsed or approximately-eclipsed conformers, the one with S₄ symmetry gives the best fit with experiment, although a small admixture of a C₁ conformation cannot be ruled out. Least-squares refinement gave the following values for the independent structural parameters (lengths, r_a basis; angles, r_α basis): C-H = 1.118 ± 0.003 Å, CC = 1.355 ± 0.002 Å, Si-C = 1.855 ±0.002 Å, ∠SiCC = 124.0 ± 0.3°, ∠SiCH = 118.4 ± 1.0°, torsion angles CSiCC are 17.5 ± 0.6° from the eclipsed conformation. During the refinement the vibrational amplitudes u and perpendicular amplitude corrections K were held constant at calculated values. The CC bond length provides evidence of interaction between the vinyl π-bonds and the vacant d-orbitals of silicon.