Institut de Physique, Université de Liège, B-4000, Sart-Tilman par Liège 1, Belgium
Institut für Physik, Universität Dortmund, D-4600, Dortmund, W. Germany
Abstract:
We report electronic structure calculations for the ideal and relaxed InSb (110) surfaces which were carried out using the tight binding scattering theoretic method. The bulk material is described by a realistic ETBM Hamiltonian and spin-orbit coupling has been taken into account explicitly. Our results show, that the spin-orbit interaction has only small influence on the surface electronic structure of InSb(110). Our results are discussed in terms of surface band structures, wavevector-resolved layer densities of states and angular-resolved weighted layer densities of states.