Electronic wavefunctions in asymmetric double quantum well structures studied via spin-flip Raman spectroscopy |
| |
| Affiliation: | 1. Institute of Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Squires Way, North Wollongong, 2500, Australia;2. School of Physics and Astronomy, Monash University, Clayton, Victoria, Australia;3. Future Low Energy Electronics Technologies (FLEET), Australian Research Centre (ARC), Australia;1. School of Microelectronics, Shandong University, Jinan, 250101, China;2. School of Information Engineering, Sanming University, Sanming, 365004, China;1. School of Physics, Northwest University, Xi''an 710127, China;2. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;1. Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC – Universidad de Zaragoza, 50009 Zaragoza, Spain;2. Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50009 Zaragoza, Spain;3. Departamento de Ciencia y Tecnología de Materiales y Fluidos, Universidad de Zaragoza, Zaragoza 50018, Spain;4. Laboratorio de Microscopías Avanzadas, Universidad de Zaragoza, 50018 Zaragoza, Spain;5. Diamond Light Source Ltd Harwell Science and Innovation Campus Didcot, Oxfordshire OX11 0DE, UK;1. Department of Chemistry, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan;2. PRESTO, Japan Science Technology Agency, Saitama 332-0012, Japan;3. Advanced Institute for Materials Research and Core Research Cluster (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan |
| |
| Abstract: | ![]()
Spin-flip Raman spectra have been obtained for two heterostructures, each containing a single CdTe quantum well and a single Cd1-xMnxTe quantum well, with barriers of Cd1-yMnyTe (y>x). The spectra show a clear sensitivity to the thickness of the central barrier between the two wells. The magnitude of the Raman shifts and the resonance energies help identify the origin of the signals in the structures. When the barrier is broad, two signals are observed, one from each separate well. When the width of the barrier is reduced, a single signal is seen, reflecting the coupling of the electronic states of the two wells. The size of the Raman shifts observed also suggest the presence of a low concentration of donors in the material, which modify the form of the electronic wavefunction in the quantum wells. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
