Oxidation behaviour of SiC coatings |
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| Authors: | K Mergia D Lafatzis N Moutis T Speliotis G Apostolopoulos F Cousin |
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| Institution: | (1) Institute of Nuclear Technology and Radiation Protection, National Centre for Scientific Research ‘Demokritos’, 15310 Aghia Paraskevi, Attikis, Greece;(2) Institute of Materials Science, National Centre for Scientific Research ‘Demokritos’, 15310 Aghia Paraskevi, Attikis, Greece;(3) Laboratoire Léon Brillouin, CEA Saclay, 91191 Gif sur Yvette, France |
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| Abstract: | Amorphous silicon carbide (SiC) films were deposited on silicon substrates by radio-frequency magnetron sputtering. The films
were oxidized in air in the temperature range 400–900 °C and for times from 1 to 16 h. Neutron reflectivity measurements provided
information on the thickness, density and roughness of the SiC and on the formed SiO2 layers. Fourier transform infrared spectroscopy was used to determine the bond structure of the formed SiO2 and changes in the bonding of SiC after exposure at the oxidation temperature. The surface morphology of the oxidized films
was characterized by atomic force microscopy measurements. The oxidation kinetics is initially fast and as the SiO2 layer is formed it slows down. The SiC consumption varies linearly with time at all oxidation temperatures. Exposure of the
SiC at the oxidation temperature affects its density and to some degree its bond structure, while the formed SiO2 has density and bond structure as that formed by oxidation of Si under the same conditions.
PACS 66.30.Ny; 68.47.Gh; 68.55.J- |
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