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FP-LAPW Calculations of the EFG at Cd Impurities in Rutile SnO2
Authors:Errico  L. A.  Fabricius  G.  Rentería  M.
Affiliation:(1) Instituto de Física La Plata (IFLP-CONICET) – Departamento de Física, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata, Argentina
Abstract:
We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO2(rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW method. In order to simulate the diluted Cd-impurity in the SnO2 host and to calculate the electronic structure of the system we used a 72-atoms super-cell, studying the relaxation introduced by the impurity in the lattice. The free-relaxation process performed shows that the relaxations of the oxygen nearest-neighbors of the impurity are not isotropic. Our prediction for the EFG tensor are compared with experimental results and point-charge model predictions. This revised version was published online in September 2006 with corrections to the Cover Date.
Keywords:impurities  relaxations  tin oxide   ab initio   electric field gradient
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