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Kilohertz high power extracavity KGW yellow raman lasers based on pulse LD side-pumped ceramic Nd: YAG
Authors:Y Bai  X M Chen  J X Guo  H L Zhang  J T Bai  Z Y Ren
Institution:1.National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), Institute of Photonics and Photon-Technology,Northwest University,Xi’ an,China;2.Shaanxi Engineering Technology Research Center for Solid State Lasers and Application,Xi’ an,China
Abstract:We report an efficient operation of a kilohertz nanosecond extracavity KGd(WO4)2 (KGW) crystal Raman yellow laser, which is pumped by a 532 nm lasers based on pulse laser diode (LD) side-pumped ceramic Nd: YAG, BBO electro-optical Q-switched and LBO crystal extracavity frequency doubling. With the 5 W, 10 ns and 1 kHz output power pumped at 532 nm, we obtained 2.58 W, 7.4 ns, 1 kHz second Stokes Raman laser output at 579.54 nm for 768 cm−1 Raman shift of KGW crystal, corresponding to a conversion efficiency of 51.4%. By changing the KGW crystal orientation, we further obtained 3.18 W, 7.8 ns, 1 kHz Raman pulses at 588.33 nm for 901 cm−1 Raman shift, corresponding to a conversion efficiency of 63.3%. The beam quality factors M2 of 579.54 and 588.33 nm were (M x−579.542 = 5.829, M y−579.542 = 6.336) and (M x−588.332 = 6.405, M y−588.332 = 6.895), respectively.
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