Kilohertz high power extracavity KGW yellow raman lasers based on pulse LD side-pumped ceramic Nd: YAG |
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Authors: | Y Bai X M Chen J X Guo H L Zhang J T Bai Z Y Ren |
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Institution: | 1.National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), Institute of Photonics and Photon-Technology,Northwest University,Xi’ an,China;2.Shaanxi Engineering Technology Research Center for Solid State Lasers and Application,Xi’ an,China |
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Abstract: | We report an efficient operation of a kilohertz nanosecond extracavity KGd(WO4)2 (KGW) crystal Raman yellow laser, which is pumped by a 532 nm lasers based on pulse laser diode (LD) side-pumped ceramic
Nd: YAG, BBO electro-optical Q-switched and LBO crystal extracavity frequency doubling. With the 5 W, 10 ns and 1 kHz output
power pumped at 532 nm, we obtained 2.58 W, 7.4 ns, 1 kHz second Stokes Raman laser output at 579.54 nm for 768 cm−1 Raman shift of KGW crystal, corresponding to a conversion efficiency of 51.4%. By changing the KGW crystal orientation, we
further obtained 3.18 W, 7.8 ns, 1 kHz Raman pulses at 588.33 nm for 901 cm−1 Raman shift, corresponding to a conversion efficiency of 63.3%. The beam quality factors M2 of 579.54 and 588.33 nm were (M
x−579.542 = 5.829, M
y−579.542 = 6.336) and (M
x−588.332 = 6.405, M
y−588.332 = 6.895), respectively. |
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Keywords: | |
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